张鹏

发布时间:2023-03-15  浏览次数:

职务职称:助理教授 硕士生导师


所在单位:高分子及复合材料系

联系电话:

电子邮箱:x_l_zhang@buaa.edu.cn

办公地点:教学4号楼217



Ø 基本情况:

张鹏,男,助理教授,硕士生导师。2018年获得华东师范大学微电子学与固体电子学博士学位。 2018.08-2023.02在北京航空航天大学材料科学与工程学院从事博士后研究。20232月加入北航材料学院,主要研究方向为二维信息材料合成及器件性能研究。以第一/通讯作者身份在Nature Synthesis, Nano Letters, Materials Today等期刊发表SCI论文十余篇。

Ø 主讲课程:

研究生课程:

本科生课程:

Ø 研究方向:

1)二维信息材料合成;

2)二维材料大面积制备;

3)器件物理及性能调控;


Ø 教学科研成果

获奖情况:

发明专利:

1)宫勇吉,张鹏,江华宁,王兴国,一种二维材料的合成方法、二维材料及其应用。申请号2022109822256

2)宫勇吉,王兴国,张鹏,江华宁,熔融析出机理生长二维材料的制备装置及其使用方法。申请号2022109806978


近五年代表性论文:

[1] Peng Zhang, Xingguo Wang, Huaning Jiang, Yiwei Zhang, Qianqian He, Kunpeng Si, Bixuan Li, Feifei Zhao, Anyang Cui, Yi Wei, Lixuan Liu, Haifeng Que, Peizhe Tang, Zhigao Hu, Wu Zhou , Kai Wu* and Yongji Gong*, Flux-assisted growth of atomically thin materials. Nature Synthesis, 1, 864–872 (2022). (第一作者)

[2] Huaning Jiang, Zhihao Zang, Xingguo Wang, Haifeng Que, Lei Wang, Kunpeng Si, Peng Zhang,* Yu Ye, and Yongji Gong*, Thickness-Tunable Growth of Composition-Controllable Two-Dimensional FexGeTe2. Nano Letters, 22, 9477−9484 (2022). (共同通讯作者)

[3] Xingguo Wang, Ce Bian, Yixiang He, Jie Guo, Peng Zhang*, Lixuan Liu, Yi Wei, Lingjia Meng, Huaning Jiang, Bixuan Li, Anmin Nie*, Lihong Bao*, Yongji Gong*, Ultrathin FeTe nanosheets with tetragonal and hexagonal phases synthesized by chemical vapor deposition. Materials Today, 45, 35-43 (2021). (共同通讯作者)

[5] Peng Zhang, Ningyan Cheng, Mengjiao Li, Zhigao Hu*, Yi Du*, and Yongji Gong*, Transition-Metal Substitution-Induced Lattice Strain and Electrical Polarity Reversal in Monolayer WS2, ACS Appl. Mater. Interfaces 12, 18650−18659 (2020). (第一作者)

[5] Peng Zhang, Ce Bian2†, Jiafu Ye3†, Lihong Bao2,7*, Weida Hu3* and Yongji Gong*, Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS2/MoS2 with enhanced performance of transistors and photodetectors. Sci. China Mater. 63(8), 1548–1559 (2020). (第一作者)

已发表的其余论文:

[1] Yiwei Zhang, Peng Zhang*, Tengfei Xu, Xingguo Wang, Huaning Jiang, and Yongji Gong*, H2S-assisted growth of 2D MS2 (M = Ti, Zr, Nb). Chinese Chemical Letters 33, 1390-1394 (2021). (共同通讯作者)

[2] Peng Zhang, Yiwei Zhang, Yi Wei, Huaning Jiang, Xingguo Wang, and Yongji Gong*, Contact engineering for two-dimensional semiconductors. J. Semicond. 41(7), 071901 (2020). (第一作者)

[3] Xingguo Wang, Zhang Zhou, Peng Zhang, Shuqing Zhang, Yang Ma, Weiwei Yang, Hao Wang, Bixuan Li, Lingjia Meng, Huaning Jiang, Shiqiang Cui, Pengbo Zhai, Jing Xiao, Wei Liu, Xiaolong Zou, Lihong Bao*, and Yongji Gong* Thickness-Controlled Synthesis of CoX2 (X = S, Se, and Te) Single Crystalline 2D Layers with Linear Magnetoresistance and High Conductivity”, Chemistry of Materials 32, 2321–2329 (2020). (共同第一作者)

[4] Liping Xu, Peng Zhang, Huaning Jiang, Xiang Wang, Fangfang Chen, Zhigao Hu,* Yongji Gong,* Liyan Shang, Jinzhong Zhang, Kai Jiang, and Junhao Chu. Large-Scale Growth and Field-Effect Transistors Electrical Engineering of Atomic-Layer SnS2. Small 15, 1904116 (2019). (共同第一作者)

[5] P. Zhang, W. Zhang, J.Y. Wang, K. Jiang, J.Z. Zhang, W.W. Li, J.D. Wu, Z.G. Hu*, and J.H. Chu, The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions, Scientific Reports 07: 4425 (1-14) (2017). (第一作者)

[6] P. Zhang, M.J. Li, Q.L. Deng, J.Z. Zhang, J.D. Wu, Z.G. Hu*, and J.H. Chu, Spectral assignments in the infrared absorption region and anomalous thermal hysteresis in the interband electronic transition of vanadium dioxide films, Phys. Chem. Chem. Phys. 18 (08): 6239-6246 (2016). (第一作者)

[7] P. Zhang, T. Huang, Q.H. You, J.Z. Zhang, W.W. Li, J.D. Wu, Z.G. Hu*, and J.H. Chu, Effects of crystal orientation on electronic band structure and anomalous shift of higher critical point in VO2 thin films during the phase transition process, J. Phys. D: Appl. Phys. 48 (48), 485302 (1-10) (2015). (第一作者)

[8] P. Zhang, K. Jiang, Q.L. Deng, Q.H. You, J.Z. Zhang, J.D. Wu, Z.G. Hu*, and J.H. Chu, Manipulations from oxygen partial pressure on higher energy electronic transition and dielectric function of VO2 films during metal-insulator transition process, J. Mater. Chem. C 03 (19), 5033-5040 (2015). (第一作者)


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